TI expands integrated GaN FET for 65W AC-DC adaptors

Texas Instruments (TI) has expended its range of gallium nitride (GaN) FETs with integrated gate drives and current sensing for 65W AC-DC power adaptors.

The portfolio of 650V integrated GaN FET devices with integrated gate drivers includes the LMG3622, LMG3624 and LMG3626 with the industry’s most accurate integrated current sensing. This helps designers achieve maximum efficiency by eliminating the need for an external shunt resistor and reducing associated power losses by as much as 94% when compared to traditional current-sensing circuits used with discrete GaN and silicon FETs.

The integrated gate drivers enable faster switching speeds, which helps keep adapters from overheating. Designers can reach up to 94% system efficiency for <75-W AC/DC applications or above 95% system efficiency for >75-W AC-DC applications. The RDS(0on) is 120mOhms.

The new devices help designers reduce the solution size of a typical 67-W power adapter by as much as 50% compared to silicon-based solutions.

The portfolio is also optimized for the most common topologies in AC/DC power conversion, such as quasi-resonant flyback, asymmetrical half bridge flyback, inductor-inductor-converter, totem-pole power factor correction and active clamp flyback.

The devices are available in a an 8 x 5.3mm, 38-pin quad flat no-lead package and pin compatible devices without integrated current sensing, LMG3612 and LMG3616, are also available. Evaluation modules, including the LMG3624EVM-081, start at US$250.

Production quantities of the LMG3622 and LMG3626 and pre-production quantities of the LMG3624 are available for purchase now on TI.com/GaN. Pricing starts at US$3.18 in 1,000-unit quantities.