1Tbyte NAND memory with 321 layers fits in AI smartphones

Sk Hynix has launched a NAND memory with 321 layers that is 0.85mm high to fit into flagship AI smartphone designs

The memory is optimised for on-device AI with fast sequential read performance and low power, and the thickness reduced by 15% to fit into flagship AI smartphone designs with 512GB and 1TB. The NAND memory stack supports the UFS 4.1 protocol for mobile applications.The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.

The increase in demand for on-device AI is leading to greater importance of the balance between computation capabilities and battery efficiency of a device. The NAND stack improves power efficiency by 7%,compared with the previous 238-high NAND device and is 0.85mm thick, down from 1mm.

The memory supports data transfer speed of 4300MB/s, the fastest sequential read for a fourth-generation of UFS, while improving random read and write speed, critical for multitasking, by 15% and 40%, respectively.

Ahn Hyun, President and Chief Development Officer, said that SK hynix plans to complete development of the 321-high 4D NAND-based SSD for both consumers and data centres within the year.

SK hynix plans customer qualification within the year with shipping in volume from the first quarter of next year.